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FDA15N65 650V N-Channel MOSFET
UniFET
FDA15N65
650V N-Channel MOSFET Features
* 16A, 650V, RDS(on) = 0.44 @VGS = 10 V * Low gate charge ( typical 48.5 nC) * Low Crss ( typical 23.6 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
January 2007
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G
TO-3PN
G DS
FDA Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDA15N65
650 16 9.6 64 30 637 16 26 4.5 260 2.1 -55 to +150 300
Unit
V A A A V mJ A mJ V/ns W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min.
-0.24 --
Max.
0.48 -40
Unit
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FDA15N65 Rev. A
FDA15N65 650V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDA15N65
Device
FDA15N65
Package
TO-3PN
TC = 25C unless otherwise noted
Reel Size
--
Tape Width
--
Quantity
30
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A, TJ = 25C ID = 250A, Referenced to 25C VDS = 650V, VGS = 0V VDS = 520V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
650 -----3.0 ------
Typ
-0.65 -----0.36 19.2 2380 295 23.6 65 125 105 65 48.5 14.0 21.2
Max Units
--1 10 100 -100 5.0 0.44 -3095 385 35.5 140 260 220 140 63.0 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 325V, ID = 15A RG = 21.7
(Note 4, 5)
------(Note 4, 5)
VDS = 520V, ID = 15A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 16A VGS = 0V, IS = 15A dIF/dt =100A/s
(Note 4)
------
---496 5.69
16 64 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 4.6mH, IAS = 16A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 16A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDA15N65 Rev. A
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FDA15N65 650V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
Figure 2. Transfer Characteristics
2
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
ID, Drain Current [A]
ID, Drain Current [A]
10
1
10
1
150 C 25 C -55 C
* Notes : 1. VDS = 40V 2. 250s Pulse Test
o o
o
10
0
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
-1
10
0
10
-1
10
0
10
1
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue
1.0
RDS(ON) [], Drain-Source On-Resistance
0.8
0.6
VGS = 10V
IDR, Reverse Drain Current [A]
10
1
0.4
150 C 25 C
o
o
VGS = 20V
0.2
* Note : TJ = 25 C
o
* Notes : 1. VGS = 0V 2. 250s Pulse Test
0.0
10
0
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
Figure 6. Gate Charge Characteristics
12
VGS, Gate-Source Voltage [V]
4000
Coss Ciss
Crss = Cgd
10
VDS = 130V VDS = 325V VDS = 520V
Capacitances [pF]
8
3000
6
2000
* Note ; 1. VGS = 0 V 2. f = 1 MHz
4
1000
Crss
2
* Note : ID = 15A
0 -1 10
10
0
10
1
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDA15N65 Rev. A
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FDA15N65 650V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0 3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
1.0
0.9
* Notes : 1. VGS = 0 V 2. ID = 250 A
RDS(ON), (Normalized) RDS(ON), On-Resistance Drain-Source(Normalized) Drain-Source On-Resistance
2.5 2.5
2.0 2.0
1.5 1.5
1.0 1.0
* Notes : * Notes : = 10 V 1. VGS 1.2. I = 5.5 V VGS = 10 A D 2. ID = 8 A
0.5 0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 0.0 -100 -100
-50 -50
00
50 50
100 100
o
150 150
200 200
TJ, Junction Temperature [ C]
Junction Temperature o C] TT,J,Junction Temperature [[ C] J
Figure 9. Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
18
10
2
10 s
15
ID, Drain Current [A]
100 s
10
1
10
0
Operation in This Area is Limited by R DS(on)
1 ms 10 ms 100 ms DC
ID, Drain Current [A]
3
12
9
* Notes :
6
10
-1
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
3
10
-2
10
0
10
1
10
2
10
0 25
50
75
100
o
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Transient Thermal Response Curve
10
0
ZJC(t), Thermal Response
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1
* N o te s :
PDM t1 t2
o
10
-2
s in g le p u ls e
1 . Z J C ( t) = 0 .4 8 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FDA15N65 Rev. A
4
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FDA15N65 650V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA15N65 Rev. A
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FDA15N65 650V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDA15N65 Rev. A
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FDA15N65 650V N-Channel MOSFET
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FDA15N65 Rev. A
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FDA15N65 650V N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I22
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
8 FDA15N65 Rev. A
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